IRF840A

MOSFET N-Chan 500V 8.0 Amp

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IRF840A Picture
SeekIC No. : 00158713 Detail

IRF840A: MOSFET N-Chan 500V 8.0 Amp

floor Price/Ceiling Price

US $ 1.79~1.91 / Piece | Get Latest Price
Part Number:
IRF840A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~725
  • 725~1000
  • 1000~2000
  • Unit Price
  • $1.91
  • $1.84
  • $1.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms


Features:

·Low Gate Charge Qg results in Simple Drive Requirement
·Improved Gate, Avalanche and dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective Coss Specified (See AN1001)



Application

·Switch Mode Power Supply ( SMPS
·Uninterruptable Power Supply
·High speed power switching



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 8.0 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 5.1
IDM Pulsed Drain Current 32
PD @ TC = 25 Power Dissipation 125 W
  Linear Derating Factor 1.0
W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)



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