Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 9 A
Resistance Drain-Source RDS (on)
: 0.65 Ohms
Features: • 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
IRF840B |
IRF840B |
Units |
| VDSS |
Drain-Source Voltage |
500 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
8.0 |
8.0 |
A |
| 5.1 |
5.1 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
32 |
32 |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
320 |
mJ |
| IAR |
Avalanche Current (Note 1) |
8.0 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
13.4 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
3.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
134 |
44
|
W |
| 1.08 |
0.35 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors IRF840B are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology IRF840B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Parameters: | Technical/Catalog Information | IRF840B |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 134W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF840B
IRF840B
|
IRF840B Data Sheet
