IRF840B

MOSFET 500V N-Channel B-FET

product image

IRF840B Picture
SeekIC No. : 00159843 Detail

IRF840B: MOSFET 500V N-Channel B-FET

floor Price/Ceiling Price

Part Number:
IRF840B
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.65 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.65 Ohms


Features:

• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter IRF840B IRF840B Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
8.0 8.0 A
5.1 5.1 A
IDM Drain Current - Pulsed (Note 1) 32 32 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ
IAR Avalanche Current (Note 1) 8.0 A
EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
134 44
W
1.08 0.35 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300



Description

These N-Channel enhancement mode power field effect transistors IRF840B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRF840B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.



Parameters:

Technical/Catalog InformationIRF840B
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs800 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max134W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF840B
IRF840B



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires - Management
Fans, Thermal Management
Audio Products
Resistors
Undefined Category
View more