IRF840LCS

MOSFET N-Chan 500V 8.0 Amp

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SeekIC No. : 00165944 Detail

IRF840LCS: MOSFET N-Chan 500V 8.0 Amp

floor Price/Ceiling Price

Part Number:
IRF840LCS
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.85 Ohms


Features:

·Ultra Low Gate Charge
·Reduced Gate Drive Requirement
·Enhanced 30V VGS Rating
·Reduced CISS, COSS, CRSS
·Extremely High Frequency Operation
·Repetitive Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 8.0 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 5.1
IDM Pulsed Drain Current 28
PD @ TA = 25 Power Dissipation 3.1 W
PD @ TC = 25 Power Dissipation 125 W
  Linear Derating Factor 1.0
W/
VGS Gate-to-Source Voltage ± 30 V
EAS Single Pulse Avalanche Energy 510 mJ
IAR Avalanche Curren t 8.0 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

This new series of low charge HEXFET® power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.

These device improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs IRF840LCS offer the designer a new power transistor standard for switching applications.


 




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