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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 6.8 mOhms | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Parameter |
Max. |
Unit | |
VDS | Drain- Source Voltage |
30 |
V |
ID @ TA = 25 | Continuous Drain Current, VGS @ -4.5V |
18 |
A |
ID @ TA= 70 | Continuous Drain Current, VGS @ -4.5V |
14.4 |
A |
IDM | Pulsed Drain Current 1 |
144 |
A |
PD @TA = 25 | Power Dissipation |
2.5 |
W |
PD @TA = 70 | Power Dissipation |
1.6 |
W |
Linear Derating Factor |
0.02 |
W/ | |
VGS | Gate-to-Source Voltage |
±20 |
V |
TJ,TSTG | Junction and Storage Temperature Range | -55 to + 150 | W/ |
Technical/Catalog Information | IRF8736PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 18A, 10V |
Input Capacitance (Ciss) @ Vds | 2315pF @ 15V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 26nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF8736PBF IRF8736PBF |