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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 18 A | ||
| Resistance Drain-Source RDS (on) : | 6.8 mOhms | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |

|
Parameter |
Max. |
Unit | |
| VDS | Drain- Source Voltage |
30 |
V |
| ID @ TA = 25 | Continuous Drain Current, VGS @ -4.5V |
18 |
A |
| ID @ TA= 70 | Continuous Drain Current, VGS @ -4.5V |
14.4 |
A |
| IDM | Pulsed Drain Current 1 |
144 |
A |
| PD @TA = 25 | Power Dissipation |
2.5 |
W |
| PD @TA = 70 | Power Dissipation |
1.6 |
W |
| Linear Derating Factor |
0.02 |
W/ | |
| VGS | Gate-to-Source Voltage |
±20 |
V |
| TJ,TSTG | Junction and Storage Temperature Range | -55 to + 150 | W/ |
| Technical/Catalog Information | IRF8736PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 2315pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 26nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF8736PBF IRF8736PBF |