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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 18.3 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Parameter |
Max. |
Unit | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
11 |
A |
ID @ TA= 70 | Continuous Drain Current, VGS @ 10V |
9.1 |
A |
IDM | Pulsed Drain Current |
88 |
A |
PD @TA = 25 | Power Dissipation |
2.5 |
W |
PD @TA = 70 | Power Dissipation |
1.6 |
W/ |
Linear Derating Factor |
2.5 |
V | |
VDS | Drain-to-Source Voltage |
30 |
V |
VGS | Gate-to-Source Voltage |
± 20 |
mJ |
TJ,TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
Technical/Catalog Information | IRF8910PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 960pF @ 10V |
Power - Max | 2W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF8910PBF IRF8910PBF |