IRF8910PBF

MOSFET

product image

IRF8910PBF Picture
SeekIC No. : 00153388 Detail

IRF8910PBF: MOSFET

floor Price/Ceiling Price

US $ .28~.77 / Piece | Get Latest Price
Part Number:
IRF8910PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.77
  • $.47
  • $.33
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 18.3 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 18.3 mOhms


Application

· Dual SO-8 MOSFET for POL converters in desktop, servers,graphics cards, game consoles and set-top box
· Lead-Free



Pinout

  Connection Diagram


Specifications

 
Parameter
Max.
Unit
ID @ TA = 25 Continuous Drain Current, VGS @ 10V
11
A
ID @ TA= 70 Continuous Drain Current, VGS @ 10V
9.1
A
IDM Pulsed Drain Current
88
A
PD @TA = 25 Power Dissipation
2.5
W
PD @TA = 70 Power Dissipation
1.6
W/
  Linear Derating Factor
2.5
V
VDS Drain-to-Source Voltage
30
V
VGS Gate-to-Source Voltage
± 20
mJ
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to + 150



Parameters:

Technical/Catalog InformationIRF8910PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs13.4 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 960pF @ 10V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs11nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF8910PBF
IRF8910PBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Prototyping Products
DE1
LED Products
Soldering, Desoldering, Rework Products
View more