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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 10 A | ||
| Resistance Drain-Source RDS (on) : | 18.3 mOhms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |

|
Parameter |
Max. |
Unit | |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
11 |
A |
| ID @ TA= 70 | Continuous Drain Current, VGS @ 10V |
9.1 |
A |
| IDM | Pulsed Drain Current |
88 |
A |
| PD @TA = 25 | Power Dissipation |
2.5 |
W |
| PD @TA = 70 | Power Dissipation |
1.6 |
W/ |
| Linear Derating Factor |
2.5 |
V | |
| VDS | Drain-to-Source Voltage |
30 |
V |
| VGS | Gate-to-Source Voltage |
± 20 |
mJ |
| TJ,TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
| Technical/Catalog Information | IRF8910PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 960pF @ 10V |
| Power - Max | 2W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF8910PBF IRF8910PBF |