IRFB31N20D

MOSFET N-CH 200V 31A TO-220AB

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IRFB31N20D Picture
SeekIC No. : 004376954 Detail

IRFB31N20D: MOSFET N-CH 200V 31A TO-220AB

floor Price/Ceiling Price

US $ 1.7~1.7 / Piece | Get Latest Price
Part Number:
IRFB31N20D
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~150
  • Unit Price
  • $1.7
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Application

High frequency DC-DC converters




Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
16
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
14
IDM
Pulsed Drain Current Å
64
PD @TA = 25°C
Power Dissipation á
140
W
PD @TC = 25°C
Power Dissipation
0.90
Linear Derating Factor
+30
W/°C
VGS
Gate-to-Source Voltage
2.7
V
TSTG
Peak Diode Recovery dv/dt É
-55 to + 175
V/ns
Storage Temperature Range
TJ
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C

TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
Mounting torqe, 6-32 or M3 screwÜ
10 lbf•in (1.1N•m)
N





Parameters:

Technical/Catalog InformationIRFB31N20D
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs82 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2370pF @ 25V
Power - Max3.1W
PackagingBulk
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFB31N20D
IRFB31N20D



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