IRFB4215

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 170nC @ 10V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 4080pF @ 25V
Power - Max: 270W
Current - Continuous Drain (Id) @ 25° C: 115A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 54A, 10V


Description

The features of IRFB4215 are: (1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)fully avalanche rated; (7)optimized for SMPS applications.

The following is about the absolute maximum ratings of IRFB4215: (1)continuous drain current, VGS @ 10V: 115A; (2)continuous drain current, VGS @ 10V: 81A; (3)drain current-pulse: 360A; (4)power dissipation: 270W; (5)linear derating factor: 1.8W/; (6)operating junction and storage temperature range: -55 to +175.

The electrical characteristics of the IRFB4215 are: (1)drain-source breakdown voltage: 60V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.066V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 9.0m max at VGS=10V, ID=54A; (4)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=20V; (6)gate-source reverse leakage: -100nA max at VGS=-20V; (7)drain-source leakage current: 25A min at VDS=60V, VGS=0V.