Purchase IRFB4310, In-stock IRFB4310 From SeekIC.
MFG:N/A Package Cooled:NA/ D/C:09+
- Table of contents:
IRFB4310
-
Suppliers
DataSheet
General Description
IRFB4310 Maximum Ratings
|
Symbol |
Parameter |
Max. |
Unit |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V |
140 |
A |
| ID @ TC=100 | Continuous Drain Current, VGS @ 10V |
97 | |
| IDM | Pulsed Drain Current |
550 | |
| PD @TC=25 | Maximum Power Dissipation |
330 |
W |
| Linear Derating Factor |
2.2 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| dv/dt | Peak Diode Recovery |
14 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw |
10lb`in (1.1N`m) |
IRFB4310 Typical Application
*High Efficiency Synchronous Rectification in SMPS
*Uninterruptible Power Supply
*High Speed Power Switching
*Hard Switched and High Frequency Circuits
*Uninterruptible Power Supply
*High Speed Power Switching
*Hard Switched and High Frequency Circuits
IRFB4310
PDF/DataSheet Download
- Datasheet: IRFB4310
- File Size: 395422 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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