IRFB9N30A

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 96W
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25° C: 9.3A
Input Capacitance (Ciss) @ Vds: 920pF @ 25V
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V


Features:

Dynamic dv/dt Rating
 Repetitive Avalanche Rated
 Fast Switching
 Ease of Paraleling
 Simple Drive Requirements


Pinout




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	9.3	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	5.9
IDM	Pulsed Drain Current	37
PD @TC = 25°C	Power Dissipation	96	w
	Linear Derating Factor	0.77	W/°C
VGS	Gate-to-Source Voltage	± 30	V
EAS	Single Pulse Avalanche Energy	160	mJ
IAR	Avalanche Current	9.3	A
EAR	Repetitive Avalanche Energy	9.6	mJ
dv/dt	Peak Diode Recovery dv/dt	4.6	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds

Description

Third Generation HEXFETs IRFB9N30A from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package IRFB9N30A is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.