IRFB9N60A

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms


Features:

Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paraleling
Simple Drive Requirements


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	9.3	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	5.9
IDM	Pulsed Drain Current	37
PD @TC = 25°C	Power Dissipation	170	w
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	± 30	V
EAS	Single Pulse Avalanche Energy	290	mJ
IAR	Avalanche Current	9.2	A
EAR	Repetitive Avalanche Energy	17	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Third Generation HEXFETs IRFB9N60A from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package IRFB9N60A is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.