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IRFBA22N50A

MOSFET N-Chan 500V 24 Amp

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SeekIC No. : 00166477 Detail

IRFBA22N50A: MOSFET N-Chan 500V 24 Amp

IRFBA22N50A Data Sheet

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Part Number:
IRFBA22N50A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-273AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.23 Ohms
Package / Case : TO-273AA


Application

Switch Mode Power Supply ( SMPS )
Uninterruptible Power Supply
 High Speed Power Switching


Specifications
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
24
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
15
IDM
Pulsed Drain Current Å
96
PD @TA = 25°C
Power Dissipation á
340
W
PD @TC = 25°C
Power Dissipation
2.7
Linear Derating Factor
+30
W/°C
VGS
Gate-to-Source Voltage
560
V
TSTG
Peak Diode Recovery dv/dt É
3.4
V/ns
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
°C
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 150
Recommended clip force
20
N



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