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MFG:IR  

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Part Number: IRFBC20

 

MFG: IR

 

 

Description: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast swit...


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IRFBC20 General Description


Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all ommercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.



IRFBC20 Maximum Ratings

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600

V

Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25
ID
2.2
A
TC = 100
1.4
Pulsed Drain Currenta
IDM
8.0
Linear Derating Factor
0.40
W/
Single Pulse Avalanche Energyb
EAS
84
mJ
Repetitive Avalanche Currenta
IAR
2.2
A
Repetitive Avalanche Energya
EAR
5.0
mJ
Maximum Power Dissipation
TC = 25
PD
50
W
Peak Diode Recovery dV/dtc
dV/dt
3.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to +150
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf ` in
1.1
N ` m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, Starting TJ = 25 , L =31 mH, RG = 25 , IAS = 2.2 A (see fig. 12).
c. ISD 2.2 A, dI/dt  40 A/s, VDD VDS, TJ  150 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


IRFBC20 Features

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


IRFBC20 datasheet

IRFBC20
PDF/DataSheet Download

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