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IRFD1Z1

Features: • 0.4A and 0.5A, 60V and 100V• rDS(ON) = 2.4W and 3.2W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature - TB334 Guidelines fo...

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SeekIC No. : 004377020 Detail

IRFD1Z1: Features: • 0.4A and 0.5A, 60V and 100V• rDS(ON) = 2.4W and 3.2W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• ...

IRFD1Z1 Data Sheet

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Part Number:
IRFD1Z1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount
      Components to PC Boards"


Specifications

    IRFD1Z0 IRFD1Z1 IRFD1Z2 IRFD1Z3 UNITS
Drain to Source (Note 1). VDS 100 60 100 60 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 100 60 100 60 V
Continuous Drain Current. ID 0.5 0.5 0.4 0.4 A
Pulsed Drain Current IDM 4.0 4.0 3.2 3.2 A
Maximum Power Dissipation PD 1.0 1.0 1.0 1.0 W
Linear Derating Factor (See Figure 1)   0.008 0.008 0.008 0.008 W/oC
Operating and Storage Temperature TJ,TSTG -55 to 150 -55 to 150 -55 to150 -55 to150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s		 TL 300 300 300 300 oC
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 oC



Description

These are N-Channel enhancement mode silicon gate power field effect transistors IRFD1Z1 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly developmental type IRFD1Z1.




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