MFG:IR Package Cooled:TO-247 D/C:07+
MFG: IR
Package Cooled: TO-247
D/C: 07+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC=100 | Continuous Drain Current, VGS @ 10V | 110 | A |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V (Package Limited | 95 | |
| IDM | Pulsed Drain Current | 640 | A |
| PD @ TC=25 | Power Dissipation | 310 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 530 | mJ |
| EAS | Single Pulse Avalanche Energy Tested Value | 1060 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| Tj | Operating Junction and | -55 to +175 | |
| TSTG | Storage Temperature Range Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRF034
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFP1405 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem...
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