MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 55V 17A DPAK
600
.76500
459.00
| Technical/Catalog Information | IRFR024N |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 370pF @ 25V |
| Power - Max | 45W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFR024N IRFR024N |
IRFR024N
PDF/DataSheet Download
Features of the IRFR/U230A are:(1)avalanche rugged technology;(2)rugged gate oxide techology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:10A(Max.)@ VDS=200V;(7)low RDS(ON):0.333(Typ.). The abso...
Fifth Generation HEXFETs of the IRFR/U120N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th...
Fifth Generation HEXFETs of the IRFRfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Powe...
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