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IRFR/U014A

Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current: 10mA (Max.) @ VDS = 60V· Lower RDS(ON): 0.097W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to...

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IRFR/U014A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current: 10mA (Max.) @ VDS = 60V· Lo...

IRFR/U014A Data Sheet

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Part Number:
IRFR/U014A
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area
· Lower Leakage Current: 10mA (Max.) @ VDS = 60V
· Lower RDS(ON): 0.097W (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
ID Continuous Drain Current (TC=25°C) 8.2 A
Continuous Drain Current (TC=100°C) 5.2 A
IDM Drain Current-Pulsed (1) 33 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (2) 58 mJ
IAR Avalanche Current (1) 8.2 A
EAR Repetitive Avalanche Energy (1) 1.8 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns
PD Total Power Dissipation (TA=25) * 2.5 W
Total Power Dissipation (TC=25)
Linear Derating Factor		 18
0.14		 W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds		 300



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