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Part Number: IRFR

 

 

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRFR General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR Maximum Ratings

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
-18
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
-11
IDM Pulsed Drain Current
-64
PD @TC = 25°C Power Dissipation
57
W
  Linear Derating Factor
0.45
W/
VGS Gate-to-Source Voltage
20
V
EAS Single Pulse Avalanche Energy
150
mJ
IAR Avalanche Current
-9.6
A
EAR Repetitive Avalanche Energy
5.7
mJ
dv/dt Peak Diode Recovery dv/dt
-5.0
V/ns
TJ
TSTG		 Operating Junction and Storage Temperature Range
-55to+150
  Soldering Temperature, for 10 seconds
300 (1.6mm from case)

IRFR Features

· Ultra Low On-Resistance
· P-Channel
· Surface Mount (IRFR5505)
· Straight Lead (IRFU5505)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated

IRFR datasheet

IRFR014
PDF/DataSheet Download

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Related Part Number

IRFR Relative Products

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    IRFPS38N60L

    The IRFPS38N60L is a kind of power MOSFET, VDSS: 600V, RDS(on): 120m, Trr:170ns, ID: 38A. If you want to know more imformation about this IC, please go to our website. The features of IRFPS38N60L can be summarized as (1)zero voltage switching SMPS; (2)telec...

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