Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance·I mproved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 A (Max.) @ VDS = 100V· Lower RDS(ON) : 0.092 (Typ.)Specifications Symbol Parameter Value Units VDSS D...
IRFR/U130A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance·I mproved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 A (Max.) @ VDS = 100V· ...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Symbol |
Parameter |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
100 |
V |
ID |
Continuous Drain Current (TC=25 ) Continuous Drain Current (TC=100 ) |
13 8.2 |
A |
IDM |
Drain Current-Pulsed Gate-to-Source Voltage |
52 |
W/ |
VGS |
Gate-to-Source Voltage |
0 |
V |
EAS |
Single Pulse Avalanche Energy |
225 |
mJ |
IAR |
Avalanche Current |
13 |
A |
EAR |
Repetitive Avalanche Energy |
4.1 |
mJ |
dV/dt |
Peak Diode Recovery dv/dt |
6.5 |
V/ns |
PD |
Total Power Dissipation (TA=25 ) Total Power Dissipation (TC=25 ) Linear Derating Factor |
2.5 139 1.11 |
W |
TJ |
Operating Junction |
-55 to 200 |
|
TSTG |
Storage Temperature Range | ||
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |