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IRFR120ATM: MOSFET 100V N-Channel A-FET

IRFR120ATM Data Sheet

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Part Number:: IRFR120ATM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	8.4 A
Resistance Drain-Source RDS (on) :	0.2 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : 8.4 A

Parameters:

Technical/Catalog Information	IRFR120ATM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	8.4A
Rds On (Max) @ Id, Vgs	200 mOhm @ 4.2A, 10V
Input Capacitance (Ciss) @ Vds	480pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR120ATM IRFR120ATM

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IRFR120ATM

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