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IRFR120N

MOSFET N-CH 100V 9.4A DPAK

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SeekIC No. : 004377329 Detail

IRFR120N: MOSFET N-CH 100V 9.4A DPAK

IRFR120N Data Sheet

floor Price/Ceiling Price

US $ .46~.46 / Piece | Get Latest Price
Part Number:
IRFR120N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~525
  • Unit Price
  • $.46
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

·Surface Mount (IRFR120N)
·Straight Lead (IRFU120N)
·Advanced Process Technology
·Fast Switching
·Fully Avalanche Rated


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
9.4
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
6.6
IDM Pulsed Drain Current
38
PD @TC = 25°C Power Dissipation
48
W
  Linear Derating Factor
0.32
W/°C
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
91
mJ
IAR Avalanche Current
5.7
A
EAR Repetitive Avalanche Energy
5.7
mJ
dv/dt Peak Diode Recovery dv/dt
4.8
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55to+175
°C
  Soldering Temperature, for 10 seconds
300(1.6mm from case )
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
3.1
°C/W
RJA Junction-to-Ambient (PCB mount) **
-
50
RJA Junction-to-Ambient
-
110



Description

Fifth Generation HEXFETs of the IRFR120N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK of the IRFR120N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Parameters:

Technical/Catalog InformationIRFR120N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C9.4A
Rds On (Max) @ Id, Vgs210 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max48W
PackagingBulk
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFR120N
IRFR120N



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