MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 14 A | ||
| Resistance Drain-Source RDS (on) : | 235 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
| Technical/Catalog Information | IRFR13N20DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 235 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 830pF @ 25V |
| Power - Max | 110W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR13N20DPBF IRFR13N20DPBF |