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IRFR220BTM_FP001

MOSFET 200V N-Ch B-FET

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SeekIC No. : 00160109 Detail

IRFR220BTM_FP001: MOSFET 200V N-Ch B-FET

IRFR220BTM_FP001 Data Sheet

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Part Number:
IRFR220BTM_FP001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.8 Ohms
Continuous Drain Current : 4.6 A


Parameters:

Technical/Catalog InformationIRFR220BTM_FP001
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4.6A
Rds On (Max) @ Id, Vgs800 mOhm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds 390pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFR220BTM_FP001
IRFR220BTM_FP001



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