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IRFR2405

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate...

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IRFR2405: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 IDM Pulsed Drain Current ...

IRFR2405 Data Sheet

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Part Number:
IRFR2405
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40
IDM Pulsed Drain Current 220
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Seventh Generation HEXFET® Power MOSFETs IRFR2405 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of IRFR2405 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




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