MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 24 A | ||
Resistance Drain-Source RDS (on) : | 95 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Symbol |
Parameter |
Max. |
Units |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
24 |
A |
ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
17 | |
IDM | Pulsed Drain Current |
96 | |
PD @TC= 25 | Maximum Power Dissipation |
140 |
W |
Linear Derating Factor |
0.92 | ||
VGS | Gate-to-Source Voltage |
± 30 |
|
dv/dt | Peak Diode Recovery dv/dt |
4.9 |
W/ |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRFR24N15DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 24A |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 14A, 10V |
Input Capacitance (Ciss) @ Vds | 890pF @ 25V |
Power - Max | 140W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR24N15DPBF IRFR24N15DPBF |