MFG:IR Package Cooled:TO-252 D/C:08+
MFG: IR
Package Cooled: TO-252
D/C: 08+
Description: Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that ach...
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
19 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
12 | |
| IDM | Pulsed Drain Current |
76 | |
| PD @TC = 25°C | Power Dissipation |
50 |
W
|
| PD @TC = 25°C | Power Dissipation (PCB Mount)** |
3.1 | |
| Linear Derating Factor |
0.40 |
W/°C | |
| Linear Derating Factor (PCB Mount)** |
0.025 | ||
| VGS | Gate-to-Source Voltage |
±20 |
V |
| EAS | Single Pulse Avalanche Energy |
100 |
mJ |
| IAR | Avalanche Current |
12 |
A |
| EAR | Repetitive Avalanche Energy |
5.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
4.5 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+175 |
°C |
| Soldering Temperature, for 10 seconds |
300(1.6mm from case ) | ||
| VESD | Human Body Model, 100pF, 1.5K |
2000 |
V |
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case |
- |
2.5 |
°C/W |
| RJA | Junction-to-Ambient (PCB mount) ** |
- |
40 | |
| RJA | Junction-to-Ambient |
- |
62 |
IRFR2605
PDF/DataSheet Download
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