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MFG:IR  Package Cooled:D-PAK  D/C:09+  

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Part Number: IRFR2607Z

 

MFG: IR

Package Cooled: D-PAK

D/C: 09+

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


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IRFR2607Z General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRFR2607Z Maximum Ratings

Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ VGS = 10V, TC = 25°C
45
A
Continuous Drain Current, VGS @ 10V
ID @ VGS = 10V, TC = 100°C
32
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
42
Pulsed Drain Current
PD @ TC = 25°±25
180
W
Power Dissipation
110
W/K ?
Linear Derating Factor
VGS
±20
V
Gate-to-Source Voltage
EAS
750
mJmW
Single Pulse Avalanche Energy
EAR
96g
o C
Single Pulse Avalanche Energy Tested Value 
dv/dt

96

Avalanche Current
TJ
TSTG

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy 
Mounting Torque, 6-32 or M3 screw

10 lbfin (1.1Nm)

g

IRFR2607Z Features

  Advanced Process Technology
  Ultra Low On-Resistance
  175°C Operating Temperature
  Fast Switching
  Repetitive Avalanche Allowed up to Tjmax

IRFR2607Z datasheet

IRF034
PDF/DataSheet Download

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