IRFR2607Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 51nC @ 10V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Vgs(th) (Max) @ Id: 4V @ 50µA
Power - Max: 110W
Input Capacitance (Ciss) @ Vds: 1440pF @ 25V
Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V


Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax




Specifications

Parameter		Max.	Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)	ID @ VGS = 10V, TC = 25°C	45	A
Continuous Drain Current, VGS @ 10V	ID @ VGS = 10V, TC = 100°C	32
Continuous Drain Current, VGS @ 10V (Package Limited)	IDM	42
Pulsed Drain Current	PD @ TC = 25°±25	180	W
Power Dissipation		110	W/K ?
Linear Derating Factor	VGS	±20	V
Gate-to-Source Voltage	EAS	750	mJmW
Single Pulse Avalanche Energy	EAR	96g	o C
Single Pulse Avalanche Energy Tested Value 	dv/dt	96
Avalanche Current	TJ TSTG	See Fig.12a, 12b, 15, 16
Repetitive Avalanche Energy 
Mounting Torque, 6-32 or M3 screw		10 lbfin (1.1Nm)	g

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device of the IRFR2607Z for use in Automotive applications and a wide variety of other applications.