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MFG:IR  D/C:06+  

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Part Number: IRFR2607ZPbF

 

MFG: IR

 

D/C: 06+

Description: Specifically designed for Automotive applications , this HEXFET&...


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IRFR2607ZPbF General Description


Specifically  designed for  Automotive applications , this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRFR2607ZPbF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
 Continuous Drain Current VGS@ 10V (Silicon Limited)
45
A
ID @ TC = 100
 Continuous Drain Current, VGS@10V
32
ID @ TC = 25
 Continuous Drain Current VGS@ 10V (Package Limited)
42
IDM
 Pulsed Drain Current
180
PD @ TC = 25
 Power Dissipation
110
W
 Linear Derating Factor
0.72
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS (Thermally limited)
 Single Pulse Avalanche Energy
96
mJ
EAS (Tested)
 Single Pulse Avalanche Energy Tested Value
96
IAR
 Avalanche Current
See Fig.12a,12b,15,16
A
EAR
 Repetitive Avalanche Energy
mJ
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)


IRFR2607ZPbF Features

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free

IRFR2607ZPbF datasheet

IRF034
PDF/DataSheet Download

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