IRFR2905ZPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 59 A
Resistance Drain-Source RDS (on) : 14.5 m Ohms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V(Silicon Limited)	59	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	42
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	240
PD @ TC = 25	Max. Power Dissipation	110	W
	Linear Derating Factor	0.72	W/
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	55	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	82
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ, TSTG	Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET of IRFR2905ZPbF  utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRFR2905ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFR2905ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 36A, 10V
Input Capacitance (Ciss) @ Vds	1380pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	44nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR2905ZPBF IRFR2905ZPBF