MFG:IR Package Cooled:N/A D/C:08+
MFG: IR
Package Cooled: N/A
D/C: 08+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 59 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 42 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 42 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @ TC = 25 | Max. Power Dissipation | 110 | W |
| Linear Derating Factor | 0.72 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy | 55 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 82 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to 175 | |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
IRF034
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET of IRFR2905Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating...
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Specifically designed for Automotive applications , this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175junction operating temperature, fa...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, ...
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