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MFG:FAIRCHILD  Package Cooled:TO-252  D/C:05+  

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Part Number: IRFR310B

 

MFG: FAIRCHILD

Package Cooled: TO-252

D/C: 05+

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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IRFR310B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

IRFR310B Maximum Ratings

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
400
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
1.7
A
1.1
A
IDM
 Drain Current - Pulsed
6.0
A
VGSS
 Gate-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
100
mJ
IAR
 Avalanche Current
1.7
A
EAR
 Repetitive Avalanche Energy
2.6
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
PD
 Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
26
W
0.21
W/°C
TJ,Tstg
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

IRFR310B Features

• 1.7A, 400V, RDS(on) = 3.4 @VGS = 10 V
• Low gate charge ( typical 7.7 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

IRFR310B datasheet

IRF034
PDF/DataSheet Download

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