MFG:IOR Package Cooled:TO252
MFG: IOR
Package Cooled: TO252
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
33 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
21 | |
| IDM | Pulsed Drain Current |
120 | |
| PD @TC = 25°C | Power Dissipation |
57 |
W |
| Linear Derating Factor |
0.45 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
95 |
mJ
|
| IAR | Avalanche Current |
18
|
A |
| EAR | Repetitive Avalanche Energy |
5.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Ultra Low On-Resistance
Surface Mount (IRFR3303)
Straight Lead (IRFU3033)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
IRFR3303
PDF/DataSheet Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFR320B has been especially tailored to minimize on-state resistance, provide superior switching per...
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFE...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFR310B has been especially tailored to minimize on-state resistance, provide superior switch...
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