MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 62 A | ||
| Resistance Drain-Source RDS (on) : | 14 mOhms | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
· High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
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· 100% RG Tested
· Lead-Free
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 75 | A |
| ID @ TC = 70 | Continuous Drain Current, VGS @ 10V | 63 | |
| IDM | Pulsed Drain Current | 300 | |
| PD @TC = 25 | Maximum Power Dissipation | 90 | W |
| PD @TA = 70 | Maximum Power Dissipation | 62 | |
| Linear Derating Factor |
0.58 |
W/ | |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Diode Maximum Forward Current | ±20 | V |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
| Technical/Catalog Information | IRFR3704PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1996pF @ 10V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR3704PBF IRFR3704PBF |