IRFR4105ZPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 24.5 m Ohms


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS @ 10V(Silicon Limited)	30	A
ID @ TC =100	Continuous Drain Current VGS @ 10V	21
IDM	Pulsed Drain Current	120
PD @ TC = 25	Max. Power Dissipation	48	W
	Linear Derating actor	0.32	W/
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	29	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	46	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ	Operating Junction	-55 to 175
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10lb`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device of the IRFR4105ZPbF for use in Automotive applications and a wide variety of other applications.

 

Parameters:

Technical/Catalog Information	IRFR4105ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	24.5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 25V
Power - Max	48W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR4105ZPBF IRFR4105ZPBF