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MFG:INTERNATIONALRECTIFIER  Package Cooled:DIP/SOP  D/C:08+  

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Part Number: IRFR4105ZPbF

 

MFG: INTERNATIONALRECTIFIER

Package Cooled: DIP/SOP

D/C: 08+

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRFR4105ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

 

IRFR4105ZPbF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current VGS @ 10V(Silicon Limited)
30
A
ID @ TC =100
Continuous Drain Current VGS @ 10V
21
IDM
Pulsed Drain Current
120
PD @ TC = 25
Max. Power Dissipation
48
W
Linear Derating actor
0.32
W/
VGS
Gate-to-Source Voltage
±20
V

EAS (Thermally limited)

 Single Pulse Avalanche Energy
29
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
46
mJ
IAR
Avalanche Current
 See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
Operating Junction
-55 to 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10lb`in (1.1N`m)

IRFR4105ZPbF Features

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Lead-Free

IRFR4105ZPbF datasheet

IRF034
PDF/DataSheet Download

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