MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 55V 30A DPAK
2000
.50643
1012.86
| Technical/Catalog Information | IRFR4105ZTRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 24.5 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 740pF @ 25V |
| Power - Max | 48W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR4105ZTRPBF IRFR4105ZTRPBF IRFR4105ZPBFTR ND IRFR4105ZPBFTRND IRFR4105ZPBFTR |
IRF034
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MOSFET N-CH 55V 30A DPAK
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,...
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