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MFG:FAIRCHILD  Package Cooled:TO-252  D/C:05+  

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Part Number: IRFR410B

 

MFG: FAIRCHILD

Package Cooled: TO-252

D/C: 05+

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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IRFR410B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.

IRFR410B Maximum Ratings

Symbol Parameter IRFR410B / IRFU410B Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 0.9 A
0.57 A
IDM Drain Current - Pulsed 3.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 40 mJ
IAR Avalanche Current 0.9 A
EAR Repetitive Avalanche Energy 2.0 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C)
             - Derate above 25°C		 20 W
0.16 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C

IRFR410B Features

• 0.9A, 500V, RDS(on) = 10 @VGS = 10 V
• Low gate charge ( typical 5.1 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

IRFR410B Connection Diagram

IRFR410B Connection Diagram

IRFR410B datasheet

IRF034
PDF/DataSheet Download

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