IRFR410B

Features: • 0.9A, 500V, RDS(on) = 10 @VGS = 10 V• Low gate charge ( typical 5.1 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityPinoutSpecifications Symbol Parameter IRFR410B / IRFU410B Units VDSS Dra...

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IRFR410B Picture
SeekIC No. : 004377381 Detail

IRFR410B: Features: • 0.9A, 500V, RDS(on) = 10 @VGS = 10 V• Low gate charge ( typical 5.1 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved d...

floor Price/Ceiling Price

Part Number:
IRFR410B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• 0.9A, 500V, RDS(on) = 10 @VGS = 10 V
• Low gate charge ( typical 5.1 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Pinout

  Connection Diagram


Specifications

Symbol Parameter IRFR410B / IRFU410B Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)
0.9 A
0.57 A
IDM Drain Current - Pulsed 3.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 40 mJ
IAR Avalanche Current 0.9 A
EAR Repetitive Avalanche Energy 2.0 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C)
             - Derate above 25°C
20 W
0.16 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C



Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices of the IRFR410B are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.




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