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Part Number: IRFR420B

 

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Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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IRFR420B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.

IRFR420B Maximum Ratings

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
500
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
2.3
A
1.5
A
IDM
 Drain Current - Pulsed
8.0
A
VGSS
 Gate-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
200
mJ
IAR
 Avalanche Current
2.3
A
EAR
 Repetitive Avalanche Energy
4.1
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
PD
 Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
41
W
0.33
W/°C
TJ,Tstg
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

IRFR420B Features

• 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

IRFR420B datasheet

IRF034
PDF/DataSheet Download

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