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IRFR430B

Features: • 3.5A, 500V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 25 nC)• Low Crss ( typical 16 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter Value Units VDSS Drain-Source ...

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IRFR430B: Features: • 3.5A, 500V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 25 nC)• Low Crss ( typical 16 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFR430B Data Sheet

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Part Number:
IRFR430B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• 3.5A, 500V, RDS(on) = 1.5 @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
500
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
3.5
A
2.2
A
IDM
 Drain Current - Pulsed
14
A
VGSS
 Gate-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
270
mJ
IAR
 Avalanche Current
3.5
A
EAR
 Repetitive Avalanche Energy
4.8
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
PD
 Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
48
W
0.38
W/°C
TJ,Tstg
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFR430B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.




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