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MFG:IR  D/C:719  

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Part Number: IRFR5305PbF

 

MFG: IR

 

D/C: 719

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRFR5305PbF General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR5305PbF Maximum Ratings

 
Parameter
Max.
Unit
ID @ TA = 25 Continuous Drain Current, VGS @ -10V
-31
A
ID @ TA= 70 Continuous Drain Current, VGS @ -10V
-22
A
IDM Pulsed Drain Current
-110
A
PD @TA = 25 Power Dissipation
110
W
PD @TA = 70 Power Dissipation
0.71
W/
  Linear Derating Factor
± 20
V
VGS Gate-to-Source Voltage
280
mJ
EAS Single Pulse Avalanche Energy
-16
A
IAR Avalanche Current
11
mJ
EAR Repetitive Avalanche Energy
-5.0
V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew

10 lbf`in (1.1N`m)

  

IRFR5305PbF Features

· Ultra Low On-Resistance
· Surface Mount (IRFR5305)
· Straight Lead (IRFU5305)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
· Lead-Free

IRFR5305PbF datasheet

IRF034
PDF/DataSheet Download

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