IRFR5305PBF

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : - 55 V
Continuous Drain Current : - 28 A
Resistance Drain-Source RDS (on) : 65 m Ohms


Features:

· Ultra Low On-Resistance
· Surface Mount (IRFR5305)
· Straight Lead (IRFU5305)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Unit
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-31	A
ID @ TA= 70	Continuous Drain Current, VGS @ -10V	-22	A
IDM	Pulsed Drain Current	-110	A
PD @TA = 25	Power Dissipation	110	W
PD @TA = 70	Power Dissipation	0.71	W/
	Linear Derating Factor	± 20	V
VGS	Gate-to-Source Voltage	280	mJ
EAS	Single Pulse Avalanche Energy	-16	A
IAR	Avalanche Current	11	mJ
EAR	Repetitive Avalanche Energy	-5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of the IRFR5305PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parameters:

Technical/Catalog Information	IRFR5305PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	31A
Rds On (Max) @ Id, Vgs	65 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR5305PBF IRFR5305PBF