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IRFR540Z

Features: Advanced Process TechnologyUltra Low On-Resistance175 Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 35 A ID @ TC =100 Continuous ...

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SeekIC No. : 004377388 Detail

IRFR540Z: Features: Advanced Process TechnologyUltra Low On-Resistance175 Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC...

IRFR540Z Data Sheet

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Part Number:
IRFR540Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
35
A
ID @ TC =100 Continuous Drain Current, VGS @ 10V (Package Limited)
25
IDM Pulsed Drain Current
140
PD @TC= 25 Power Dissipation
91
W
  Linear Derating Factor
0.61
W/
VGS Gate-to-Source Voltage
± 20
V
EAS (Thermally limited) Single Pulse Avalanche Energy
39
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
75
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Reflow Soldering Temperature, for 10 seconds
300
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)



Description

Specifically designed for Automotive applications of the IRFR540Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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