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MFG:IR  Package Cooled:TO-252  D/C:08+  

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Part Number: IRFR6215PbF

 

MFG: IR

Package Cooled: TO-252

D/C: 08+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRFR6215PbF General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR6215PbF Maximum Ratings
Parameter
Max.
Units
ID @ VGS=-12V,TC=25
 Continuous Drain Curren VGS@ 10V
-13
A
ID @ VGS=-12V,TC=100
 Continuous Drain Curren VGS@ 10V
-9.0
IDM
 Pulsed Drain Current
-44
PD@ TC= 25
 Power Dissipatio
110
W
 Linear Derating Factor
0.71
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
310
mJ
IAR
 Avalanche Current

-6.6
A
EAR
 Repetitive Avalanche Energy
11
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.0
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)

IRFR6215PbF Features

`P-Channel
`175 Operating Temperatur
`Surface Mount (IRFR6215)
`Straight Lead (IRFU6215)
`Advanced Process Technology
` Fast Switching
`Fully Avalanche Rated
`Lead-Free

IRFR6215PbF datasheet

IRF034
PDF/DataSheet Download

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