Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Package / Case
: DPAK
Transistor Polarity
: P-Channel
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 13 A
Drain-Source Breakdown Voltage
: - 150 V
Resistance Drain-Source RDS (on)
: 580 mOhms
Features: `P-Channel
`175 Operating Temperatur
`Surface Mount (IRFR6215)
`Straight Lead (IRFU6215)
`Advanced Process Technology
` Fast Switching
`Fully Avalanche Rated
`Lead-Free
Specifications
|
|
Parameter |
Max. |
Units |
|
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren VGS@ 10V |
-13 |
A |
|
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren VGS@ 10V |
-9.0 |
|
IDM |
Pulsed Drain Current |
-44 |
|
PD@ TC= 25 |
Power Dissipatio |
110 |
W |
|
|
Linear Derating Factor |
0.71 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
310 |
mJ |
|
IAR |
Avalanche Current |
|
A |
|
EAR |
Repetitive Avalanche Energy |
11 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
|
TJ
TSTG |
Operating Junction
Storage Temperature Range |
-55 to 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK of the IRFR6215PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parameters: | Technical/Catalog Information | IRFR6215PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 295 mOhm @ 6.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 860pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR6215PBF
IRFR6215PBF
|
IRFR6215PBF Data Sheet
