IRFR9024N

Maximum Operating Temperature :
Mounting Style :
Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Package / Case : DPAK
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 175 mOhms


Features:

Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-11	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-8
IDM	Pulsed Drain Current	-44
PD @TC = 25°C	Power Dissipation	38	W
	Linear Derating Factor	0.30	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	62	mJ
IAR	Avalanche Current	-6.6	A
EAR	Repetitive Avalanche Energy	3.8	mJ
dv/dt	Peak Diode Recovery dv/dt	-10	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	260 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of the IRFR9024N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.