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MFG:IOR  Package Cooled:TO252  

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Part Number: IRFR9024N

 

MFG: IOR

Package Cooled: TO252

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...


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IRFR9024N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR9024N Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -11 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8
IDM Pulsed Drain Current -44
PD @TC = 25°C Power Dissipation 38 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 62 mJ
IAR Avalanche Current -6.6 A
EAR Repetitive Avalanche Energy 3.8 mJ
dv/dt Peak Diode Recovery dv/dt -10 V/ns
TJ
TSTG		 Operating Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 260 (1.6mm from case )

IRFR9024N Features

 Ultra Low On-Resistance
 P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated

IRFR9024N datasheet

IRFR9024N
PDF/DataSheet Download

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Related Part Number

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