IRFR9024NTRPBF

MOSFET

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IRFR9024NTRPBF Picture
SeekIC No. : 00149638 Detail

IRFR9024NTRPBF: MOSFET

floor Price/Ceiling Price

US $ .25~.76 / Piece | Get Latest Price
Part Number:
IRFR9024NTRPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.76
  • $.44
  • $.27
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 11 A
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : - 55 V


Description

The IRFR9024NTRPBF is one member of the IRFR9024 family which is designed as the HEXFET Power MOSFET that has some points of features: (1)ultra low on-resistance; (2)P-channel; (3)surface mount; (4)straight lead; (5)advanced process technology; (6)fast switching; (7)fully avalanche rated.

The absolute maximum ratings of the IRFR9024NTRPBF can be summarized as:(1)Continuous Drain Current, VGS @ -10V (TC = 25°C): -11 A;(2)Continuous Drain Current, VGS @ -10V (TC = 100°C): -8 A;(3)Pulsed Drain Current: -44 A;(4)Power Dissipation: 38 W;(5)Linear Derating Factor: 0.30 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Single Pulse Avalanche Energy: 62 mJ;(8)Avalanche Current: -6.6 A;(9)Repetitive Avalanche Energy: 3.8 mJ;(10)Peak Diode Recovery dv/dt: -10 V/ns.

The electrical characteristics of this device can be summarized as:(1)Drain-to-Source Breakdown Voltage: -55 V;(2)Breakdown Voltage Temp. Coefficient: -0.05 V/°C;(3)Static Drain-to-Source On-Resistance: 0.175 ;(4)Gate Threshold Voltage: -2.0 to -4.0 V;(5)Forward Transconductance: 2.5 s;(6)Total Gate Charge: 19 nC;(7)Reverse Transfer Capacitance: 92 pF. If you want to know more information about the IRFR9024NTRPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationIRFR9024NTRPBF
VendorInternational Rectifier (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs175 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max38W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFR9024NTRPBF
IRFR9024NTRPBF
IRFR9024NPBFCT ND
IRFR9024NPBFCTND
IRFR9024NPBFCT



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