MFG:IOR Package Cooled:TO252
MFG: IOR
Package Cooled: TO252
Description: These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of ene...
These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits.
|
IRFR9120, IRFU9120 |
UNITS | ||
| Drain to Source Voltage |
VDSS |
-100 |
V |
| Drain to Gate Voltage (RGS = 20k) |
VDGR |
-100 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current |
ID |
5.6 |
A |
| Pulsed Drain Current |
IDM |
Refer to Peak Current Curve |
|
| Single Pulse Avalanche Rating |
EAS |
Refer to UIS Curve |
|
| Power Dissipation |
PD |
42 |
W |
| Linear Derating Factor |
0.33 |
W/ | |
| Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
|
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
|
IRFR9120
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