IRFR9120N

Features:

Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9120N)
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-6.6	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-4.2
IDM	Pulsed Drain Current	-26
PD @ TC = 25°C	Power Dissipation	40	W
	Linear Derating Factor	0.32	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	-6.6	A
EAR	Repetitive Avalanche Energy	4.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs IRFR9120N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Parameters:

Technical/Catalog Information	IRFR9120N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	6.6A
Rds On (Max) @ Id, Vgs	480 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFR9120N IRFR9120N