MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET P-CH 100V 6.6A DPAK
1200
.34620
415.44
| Technical/Catalog Information | IRFR9120NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 6.6A |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 3.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| Power - Max | 40W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR9120NPBF IRFR9120NPBF |
IRF034
PDF/DataSheet Download
Fifth Generation HEXFETs IRFR9120N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe...
These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. The IRFR9120 is P-Channel enhancement mode silicon gate power field effect transistors designed for applic...
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