IRFR9N20DPBF, US $ .32-.87 , International Rectifier, IRFR9N20DPBF DataSheet download, circuit diagram from SeekIC.com

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IRFR9N20DPBF: MOSFET

IRFR9N20DPBF Data Sheet

US $ .32~.87 / Piece | Get Latest Price

Part Number:: IRFR9N20DPBF
Mfg:: International Rectifier
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	9.4 A
Resistance Drain-Source RDS (on) :	380 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 9.4 A
Resistance Drain-Source RDS (on) : 380 m Ohms

Parameters:

Technical/Catalog Information	IRFR9N20DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9.4A
Rds On (Max) @ Id, Vgs	380 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds	560pF @ 25V
Power - Max	86W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR9N20DPBF IRFR9N20DPBF

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IRFR9N20DPBF

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