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IRFS17N20DPBF

MOSFET

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SeekIC No. : 00155720 Detail

IRFS17N20DPBF: MOSFET

IRFS17N20DPBF Data Sheet

floor Price/Ceiling Price

US $ .65~.68 / Piece | Get Latest Price
Part Number:
IRFS17N20DPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2160
  • 2160~3000
  • Unit Price
  • $.68
  • $.65
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 170 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 170 m Ohms


Features:

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to
    Simplify Design, (See App. Note AN1001)
·Fully Characterized Avalanche Voltage and Current


Application

·High frequency DC-DC converters
·Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 16 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 64
PD @TA = 25 Power Dissipation 3.8 W
PD @TC = 25 Power Dissipation 140
  Linear Derating Factor 0.90 W/
VG Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 2.7 V/ns
TJ Operating Junction and -55 to + 175  
TSTG Storage Temperature Range
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



Parameters:

Technical/Catalog InformationIRFS17N20DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs170 mOhm @ 9.8A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
Power - Max3.8W
PackagingBulk
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFS17N20DPBF
IRFS17N20DPBF



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