MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 24 A | ||
| Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | D2PAK | Packaging : | Tube |
|
Symbol |
Parameter |
Max. |
Units |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
24 |
A |
| ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
17 | |
| IDM | Pulsed Drain Current |
96 | |
| PD @TA= 25 | Power Dissipation |
3.8 |
W
|
| PD @TC= 25 | Power Dissipation |
170 | |
| Linear Derating Factor |
1.1 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 30 |
V |
| dv/dt | Peak Diode Recovery dv/dt |
3.3 |
V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRFS23N20DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 10V |
| Input Capacitance (Ciss) @ Vds | 1960pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 86nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFS23N20DPBF IRFS23N20DPBF |