MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 60 A | ||
| Resistance Drain-Source RDS (on) : | 32 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | D2PAK | Packaging : | Tube |
|
Parameter |
Max. |
Units | |
|
ID@ TC = 25 |
Continuous Drain Current VGS @ 10V |
51* |
A |
|
ID@ TC = 100 |
Continuous Drain Current VGS @ 10V |
36* | |
|
IDM |
Pulsed Drain Current |
240 | |
|
PD @ TA = 25 |
Power Dissipation |
3.8 |
W |
|
PD @ TC = 25 |
Power Dissipation |
230* | |
| Linear Derating Factor |
1.5 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
|
TJ |
Operating Junction |
-55 to + 175 |
|
|
TSTG |
Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case | ||
| Mounting torque, 6-32 or M3 screw |
10 lbf.in (1.1N.m) |
N |
| Technical/Catalog Information | IRFS52N15DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 51A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 36A, 10V |
| Input Capacitance (Ciss) @ Vds | 2770pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 89nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFS52N15DPBF IRFS52N15DPBF |