IRFS59N10DPBF, US $ 1.07-1.07 , International Rectifier, IRFS59N10DPBF DataSheet download, circuit diagram from SeekIC.com

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IRFS59N10DPBF: MOSFET

IRFS59N10DPBF Data Sheet

US $ 1.07~1.07 / Piece | Get Latest Price

Part Number:: IRFS59N10DPBF
Mfg:: International Rectifier
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	59 A
Resistance Drain-Source RDS (on) :	25 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 59 A
Resistance Drain-Source RDS (on) : 25 m Ohms

Parameters:

Technical/Catalog Information	IRFS59N10DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	25 mOhm @ 35.4A, 10A
Input Capacitance (Ciss) @ Vds	2450pF @ 25V
Power - Max	3.8W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	114nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFS59N10DPBF IRFS59N10DPBF

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IRFS59N10DPBF

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