MFG:FAIRCHILD Package Cooled:TO-220 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 05+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
| Symbol | Parameter | IRF710B | IRFS710B | Units |
| VDSS | Drain-Source Voltage | 400 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
2.0 | 2.0 * | A |
| 1.3 | 1.3 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | 6.0 * | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ | |
| IAR | Avalanche Current (Note 1) | 2.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.6 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
36 | 23 | W |
| 0.29 | 0.19 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
IRF034
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MOSFET N-CH 250V 21A TO-220F
These N-Channel enhancement mode power field effect transistors of the IRFS654Bare produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS654Bhas been especially tailored to minimize on-state resistance, provide s...
These N-Channel enhancement mode power field effect transistors of the IRFS650Bare produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS650B has been especially tailored to minimize on-state resistance, provide ...
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